发明名称 |
Negative-working photolithographic patterning material and method for the preparation of ion-implanted and metal-plated substrates by using the same |
摘要 |
Disclosed is a negative-working photolithographic patterning material consisting of a substrate and a negative-working photoresist layer having a relatively large thickness on the substrate surface which is suitable for the formation of a patternwise masking layer in a patternwise ion-implantation or metal plating treatment. The negative working photoresist layer is formed from a negative-working chemical amplification photoresist composition comprising an alkali-soluble resinous ingredient, a radiation-sensitive acid-generating agent and a crosslinking agent, of which the alkali-soluble resinous ingredient is a m-cresol novolak resin prepared by the acid-catalyzed condensation reaction of formaldehyde and m-cresol alone as the phenolic reactant or a combination of such a m-cresol novolak resin and a polyhydroxystyrene resin of which at least 50% by weight is the m-cresol novolak resin.
|
申请公布号 |
US6399275(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20000707890 |
申请日期 |
2000.11.08 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
SUGETA YOSHIKI;MORIO KIMITAKA;HARAGUCHI TAKAYUKI |
分类号 |
G03F7/004;G03F7/038;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|