发明名称 Negative-working photolithographic patterning material and method for the preparation of ion-implanted and metal-plated substrates by using the same
摘要 Disclosed is a negative-working photolithographic patterning material consisting of a substrate and a negative-working photoresist layer having a relatively large thickness on the substrate surface which is suitable for the formation of a patternwise masking layer in a patternwise ion-implantation or metal plating treatment. The negative working photoresist layer is formed from a negative-working chemical amplification photoresist composition comprising an alkali-soluble resinous ingredient, a radiation-sensitive acid-generating agent and a crosslinking agent, of which the alkali-soluble resinous ingredient is a m-cresol novolak resin prepared by the acid-catalyzed condensation reaction of formaldehyde and m-cresol alone as the phenolic reactant or a combination of such a m-cresol novolak resin and a polyhydroxystyrene resin of which at least 50% by weight is the m-cresol novolak resin.
申请公布号 US6399275(B1) 申请公布日期 2002.06.04
申请号 US20000707890 申请日期 2000.11.08
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SUGETA YOSHIKI;MORIO KIMITAKA;HARAGUCHI TAKAYUKI
分类号 G03F7/004;G03F7/038;(IPC1-7):G03F7/004 主分类号 G03F7/004
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