| 摘要 |
An extremely simple method to fabricate MOSFET transistors is described including enhancements of the basic concept. A key idea is that two areas of polysilicon (1, 3) can be isolated from each other and used to isolate a third silicon area (5), if the areas of polysilicon are placed from each other at a distance corresponding to the width of two side wall spacers, and then in a common way oxide or nitride spacers are formed. By means of the method described, a device with limited metallizing is manufactured using only one mask layer. Using one additional mask, the method is extended for producing simple CMOS building blocks. As an illustration the layout of the most common CMOS building block, a CMOS inverter, is demonstrated. |
