发明名称 Microwave semiconductor device with improved heat discharge and electrical properties and manufacturing method thereof
摘要 In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excellent electric property is obtained.
申请公布号 US6400035(B1) 申请公布日期 2002.06.04
申请号 US20010804239 申请日期 2001.03.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIRATA SEIICHI;TAKAGI KAZUTAKA
分类号 H01L23/12;H01L21/98;H01L23/367;H01L23/66;H01L25/065;(IPC1-7):H01L23/40 主分类号 H01L23/12
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