Semiconductor device and fabrication process therefor and capacitor structure

摘要

A semiconductor device with a high reliability is provided. The semiconductor device includes a silicon substrate, titanium nitride films and an interlayer insulating film. A first opening is formed in the titanium nitride film. A second opening having a diameter different from that of the first opening is formed in the second titanium nitride film. A contact hole is formed in the interlayer insulating film. A titanium film, a titanium nitride film, a plug layer and an interconnect layer are formed so as to be electrically connected to the titanium nitride films through the first and second openings.