发明名称 |
PE-silane oxide particle performance improvement |
摘要 |
A method of forming a PE-silane oxide layer with a greatly reduced particle count is described. A semiconductor substrate is provided over which a silicon oxide film is to be formed. The silicon oxide film is formed by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds whereby the pre-flowing step prevents formation of particles on the silicon oxide film, and 2) thereafter depositing a silicon oxide film by chemical vapor deposition by flowing a silane gas into the deposition chamber to complete formation of a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit.
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申请公布号 |
US6399522(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US19980075115 |
申请日期 |
1998.05.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSAN CHUN-CHING;CHIEN HUNG-JU;CHEN CHUN-CHANG;WANG YING-LANG |
分类号 |
C23C16/02;C23C16/40;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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