| 摘要 |
PROBLEM TO BE SOLVED: To provide a target material for forming a protective layer of light media, which shows a superior fracture resistance even when a high power condition for sputtering is employed in order to form the layer at high speed. SOLUTION: The target material for forming the protective layer of light media comprises a compact sintered with hot press consisting of mixed powder having a composition of 4-30% silicon oxide, 7-35% indium oxide, 1-5% titanium oxide, and zinc sulfide as a remainder, by mass%, and a structure in which a mixed phase of substantial indium oxide and titanium oxide composes a continuous reticulated phase, and a zinc sulfide phase and a silicon oxide phase bury the rest of the above reticulated continuous phase as a dispersed phase each, when the structure is observed with a scanning electron microscope. |
