发明名称 |
Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
摘要 |
Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
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申请公布号 |
US6399429(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20000486619 |
申请日期 |
2000.02.29 |
申请人 |
SONY CORPORATION |
发明人 |
YAMOTO HISAYOSHI;YAMANAKA HIDEO;SATOU YUICHI;YAGI HAJIME |
分类号 |
C30B25/02;H01L21/20;H01L21/205;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L21/86;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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