Method of flattening a surface of a semiconductor film

摘要

A surface of a semiconductor film formed on the substantial entirety of a substrate is bombarded with ceramic particles blasted by an abrasive particle discharge nozzle. The abrasive particle discharge nozzle blasts the abrasive ceramic particles while repeating its reciprocal movement along the X-axis at a constat cycle and high velocity. In a flattening step, the substrate is moved relative to the abrasive particle discharge nozzle along the Y-axis so that the entire surface of the semiconductor film is bombarded with the ceramic particles. Thus, a method is offered to readily flatten an irregular surface of a semiconductor film.