发明名称 FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To form a metal oxide film on an object to be film formed without placing the object in an inert gas atmosphere. SOLUTION: This apparatus includes irradiating a substrate 22 which is accommodated in a film forming chamber 20 kept in vacuum, with metal ion from a metal ion source 36, and then irradiating the substrate 20 with oxide ion from an oxide ion source 30, to form the metal oxide film on the substrate 22.
申请公布号 JP2002161356(A) 申请公布日期 2002.06.04
申请号 JP20000356107 申请日期 2000.11.22
申请人 HITACHI LTD 发明人 MITSUFUJI KEIMEI;KAMEI MITSUHIRO;UMEHARA SATOSHI
分类号 C23C14/32;G11B5/39;H01F41/14;H01F41/22;H01J37/317;H01L43/08;H01L43/12;(IPC1-7):C23C14/32 主分类号 C23C14/32
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