发明名称 |
Liquid crystal display and manufacturing process of thin film transistor used therein |
摘要 |
A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus.After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+a-Si:H film 5a.
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申请公布号 |
US6399428(B2) |
申请公布日期 |
2002.06.04 |
申请号 |
US20010778786 |
申请日期 |
2001.02.01 |
申请人 |
KABUSHIKI KAISHA ADVANCED DISPLAY;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKAHORI TADAKI;SAKOGUCHI TETSUYA;NOGUCHI KAZUHIKO;YABUSHITA KOUJI;KUBOTA TAKESHI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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地址 |
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