发明名称 |
Species implantation for minimizing interface defect density in flash memory devices |
摘要 |
A predetermined species such as nitrogen is placed at an interface between a bit line junction and a dielectric layer of a control dielectric structure of a flash memory device to minimize degradation of such an interface by minimizing formation of interface defects during program or erase operations of the flash memory device. The predetermined species such as nitrogen is implanted into a bit line junction of the flash memory device. A thermal process is performed that heats up the semiconductor wafer such that the predetermined species such as nitrogen implanted within the semiconductor wafer thermally drifts to the interface between the bit line junction and the control dielectric structure during the thermal process. The predetermined species such as nitrogen at the interface minimizes formation of interface defects and thus degradation of the interface with time during the program or erase operations of the flash memory device.
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申请公布号 |
US6399984(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20010882242 |
申请日期 |
2001.06.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WU YIDER;RAMSBEY MARK T.;CHANG CHI;SUN YU;PHAM TUAN DUC;YANG JEAN Y. |
分类号 |
H01L21/8246;H01L27/115;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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地址 |
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