发明名称 Semiconductor memory device
摘要 The semiconductor memory device, provided with a secondary regular memory region for storing a rewrite program and the like in addition to a primary regular memory region for storing data, includes a spare block decoder for enabling selection of a spare memory block and a register section for holding a signal that activates the spare block decoder. Whether the spare memory block is used as the secondary regular memory region or as a spare memory block for redundancy defect replacement is controlled with the signal held in the register section. In this way, the secondary regular memory region is provided without increasing the area.
申请公布号 US6400622(B1) 申请公布日期 2002.06.04
申请号 US20010983076 申请日期 2001.10.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJIWARA ATSUSHI
分类号 G06F12/16;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C7/00;G11C8/00 主分类号 G06F12/16
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