MECHANOCHEMICAL POLISHING METHOD FOR SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for polishing a silicon wafer with the usage of lower roughness on a surface and a slight failure compared to a wafer polished by a conventional technical standard. SOLUTION: The silicon wafer is rotated while an alkaline polishing liquid containing a polisher is continuously supplied to a surface of the silicon wafer to be polished on a polishing surface plate covered with a polishing cloth. Thus, the silicon wafer is mechanochemically polished. In this stage, at least 2μm of a material of the silicon surface polished at the polishing is ground. In this mechanochemical polishing method for the silicon wafer, at least two different stop agents are supplied in order at a position of the polishing liquid just after completion of the polishing while maintaining rotational movements. The stop agents respectively cause grinding of the material on the silicon surface polished in an amount of less than 0.5μm.