发明名称 Resist composition and patterning process
摘要 A resist composition contains as a base resin a polymer comprising recurring units of the formula (1-1) or (1-2) and having a Mw of 1,000-500,000.R1 is H, methyl or CO2R2, R2 is a straight, branched or cyclic C1-15 alkyl group, R3 is hydrogen, methyl or CH2CO2R2, R4 is an acid labile group, i is an integer of 1 to 4, and k is equal to 0 or 1. The resist composition has significantly improved sensitivity, resolution and etching resistance and is very useful in precise microfabrication.
申请公布号 US6399274(B1) 申请公布日期 2002.06.04
申请号 US20000694706 申请日期 2000.10.24
申请人 SHIN-ETSU CHEMICAL CO., LTD 发明人 KINSHO TAKESHI;NISHI TSUNEHIRO;HASEGAWA KOJI;WATANABE TAKERU;HATAKEYAMA JUN
分类号 H01L21/027;C08F32/08;G03F7/004;G03F7/039;(IPC1-7):G03F7/004 主分类号 H01L21/027
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