METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a notch and a void on a side surface of the metal interconnection by forming a lattice filling layer of titanium capable of filling the vacancy of an aluminum layer exposed to the upper portion and the sidewall of a metal interconnection pattern. CONSTITUTION: An aluminum metal layer(2) is deposited by a predetermined thickness. A metal layer(3) for preventing anti-reflection and filling the vacancy of the surface of the aluminum layer is formed on the aluminum layer. A photoresist layer mask pattern is formed on the metal layer for preventing anti-reflection and filling the vacancy of the aluminum layer to form the metal interconnection pattern. A predetermined thickness of a titanium metal is deposited. The titanium layer is blanket-etched until the anti-reflecting and filling metal layer is exposed.