| 摘要 |
PURPOSE: To provide a transistor with high dielectric strength which is suitable to a microprocess. CONSTITUTION: The semiconductor device is composed of a first electrode 4 which is formed on a semiconductor substrate 1 of a first conductive type across a gate insulating film 2, a second electrode 8 which is formed on at least the electrode 4 across an intermediate insulating film 6, and a couple of impurity regions of a second conductive type which are formed on the semiconductor substrate 1 separately from each other; and at least one of the impurity regions is formed of a lightly doped region 5, an intermediately doped region 9, and a heavily doped region 10 adjacently in order from the area side right below the first electrode 4.
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