METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to prevent a punch-through of devices by controlling a length of spacers. CONSTITUTION: After forming a gate oxide(22) on a semiconductor substrate(21), gate electrodes(23) are formed on the gate oxide(22). A thin oxide layer and a thick insulating layer are sequentially formed on the entire surface of the resultant structure. Double spacers(27) having a first spacer(24) and a second spacer(25) are formed at both sidewalls of the gate electrodes(23) by selectively etching the thick insulating layer and the thin oxide layer. Thereby, the length of the double spacers(27) is easily controlled.