METHOD FOR CLEANSING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A cleansing method of semiconductor devices is provided to reduce residues of a substrate by performing an additional wet cleansing after removing contaminated material with material layer. CONSTITUTION: A material layer(110) made of a photoresist is formed on the entire surface of a substrate(100) deposited with a contaminated material such as particles(106). Then, the resultant structure is performed with a thermal treatment. The contaminated material is then removed by removing the material layer(110) in the same time. At this time, the removing process of the material layer is O2 plasma ashing. A wet cleansing is performed on the entire surface of the material layer and contaminated material removed substrate(100). At this time, the wet cleansing is additional cleansing.