| 摘要 |
PURPOSE: A semiconductor device is provided to realize a dummy cell for precisely generating a reference signal and to correctly read memory information stored in a memory cell composed of one MTJ device and one transistor. CONSTITUTION: A memory cell array(MCA) and a dummy cell array(DCA1) are disposed on one of the sides of word driver array(WDA). A memory block(BLK) includes multiplexers(MUXU1,MUXL1,MUXUD,MUXLD), write circuits(WCU1,WCL1), a dummy write circuit(DWU1) and a read circuit(RDC1). The feature of the memory block in this embodiment is that dummy cells(DC) having two memory cells(MCL,MCH) having the same construction and juxtaposed with each other are arranged to each word line pair, and two cells(MCL,MCH) holding complementary information are activated to generate a reference signal. |
