发明名称 |
TRENCH CAPACITOR WITH INSULATION COLLAR STACK, AND METHOD OF FORMING THEREOF |
摘要 |
A method of using at least two insulative layers to form the isolation collar of a trench capacitor, and the device formed therefrom. The first layer is preferably an oxide (e.g., silicon dioxide 116) formed on the trench substrate sidewalls, and is formed through a TEOS, LOCOS, or combined TEOS/LOCOS process. Preferably, both the TEOS process and the LOCOS process are used to form the first layer. The second layer is preferably a silicon nitride layer (114) formed on the oxide layer. The multiple layers function as an isolation collar stack for the trench. The dopant penetration barrier properties of the second layer permit the dielectric collar stack to be used as a self aligned mask for subsequent buried plate (120) doping. |
申请公布号 |
WO0189284(A3) |
申请公布日期 |
2002.05.30 |
申请号 |
WO2001US15896 |
申请日期 |
2001.05.16 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
TEWS, HELMUT, HORST;MICHAELIS, ALEXANDER;KUDELKA, STEPHEN;SCHROEDER, UWE;GRUENING, ULRIKE |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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