| 摘要 |
A trench DMOS transistor structure (200) is provided that includes at least three individual trench DMOS transistor cells (21) formed on a substrate (220) of a first conductivity type. The plurality of individual DMOS transistor cells is dividable into peripheral transistor cells (211, 212, 213) and interior transistor cells (214, 215, 216). Each of the individual transistor cells includes a body region (214) located on the substrate, which has a second conductivity type. At least one trench (202, 204) extends through the body region and the substrate. An insulating layer (230) lines the trench. A conductive electrode is located in the trench, which overlies the insulating layer. Interior transistor cells, but not the peripheral transistor cells, each further include a source region (240) of the first conductivity type in the body region adjacent to the trench. |
