发明名称 |
Methods of fabricating integrated circuit devices having spin on glass (SOG) insulating layers and integrated circuit devices fabricated thereby |
摘要 |
Methods are provided for forming integrated circuit devices. A spin on glass (SOG) insulating layer is formed on an integrated circuit substrate. The SOG insulating layer includes sidewalls that define contact holes therein and spacers are formed on the sidewalls of the SOG insulating layer. Integrated circuit devices are also provided. The integrated circuit devices include an integrated circuit substrate, a spin on glass (SOG) insulating layer on the integrated circuit substrate. The SOG insulating layer includes sidewalls that define contact holes therein and spacers are provided on sidewalls of the SOG insulating layer.
|
申请公布号 |
US2002064968(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20010999624 |
申请日期 |
2001.10.30 |
申请人 |
KIM WON-JIN;HONG JIN-GI |
发明人 |
KIM WON-JIN;HONG JIN-GI |
分类号 |
H01L21/768;H01L21/28;H01L21/311;H01L21/312;H01L21/336;H01L21/60;H01L29/78;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|