| 摘要 |
<p>A method for producing a ceramic substrate having an electroconducting material formed on the surface thereof or in the interior thereof, characterized in that it comprises firing a formed product comprising a ceramic powder to prepare a primary sintered compact, and then subjecting the primary sintered compact to an annealing in a temperature range of 1400 to 1800 °C . The method allows the production of a large ceramic substrate which is capable of having a wide-bore semiconductor wafer placed thereon and also is insusceptible to cracking or breakage originated from the pressing, pushing, or the like applied thereto, due to its enhanced strength as compared to that of a conventional large ceramic substrate.</p> |
