| 摘要 |
A semiconductor device (10, 40, 50, 60) is an integrated circuit which includes a silicon substrate (12) and a silicon film (21) that are coupled to each other by an intermediate structure (16, 18, 62, 67). The intermediate structure includes an insulating material (16, 18, 67). Bonding is used in the region of the intermediate structure in order to effect the coupling of the silicon substrate and film. A radio-frequency circuit (23) is formed on the silicon film, and includes an inductive component (28) and a non-inductive component (26, 27). The insulating material has an effective thickness which is larger beneath the inductive component than beneath the non-inductive component, so as to provide a good ground plane effect as to the non-inductive component, while facilitating a reduced ground plane effect and a high degree of energy storage as to the inductive component.
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