发明名称 |
Method for cleaning semiconductor wafers with ozone-containing solvent |
摘要 |
A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.
|
申请公布号 |
US2002062841(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20000726628 |
申请日期 |
2000.11.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TWU JIH-CHURNG;KAO RONG-HUI;CHENG CHIA-CHUN |
分类号 |
B08B3/08;H01L21/00;(IPC1-7):B08B3/08 |
主分类号 |
B08B3/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|