The invention relates to a heterostructure with a buffer layer or substrate, a channel arranged on the buffer layer or substrate and a capping layer arranged on the channel. Said channel is made from a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and the channel, or the region around the boundary interface between the channel and the capping layer is doped in such a way that any piezo charging which occurs at the respective boundary interface is compensated.
