| 摘要 |
<p>A copper bonding pad (422) is directly supported by a copper via pad structure (420), the copper via pad structure having substantially the same geometry and dimensions as the copper bonding pad. The combination of the copper bonding pad (422) and the copper via pad (420) structure results in an increase in effective thickness of the copper bonding pad. Due to this effective increase in the bonding pad thickness, the bonding pad is more tolerant to the potential dishing problem caused by the CMP process. Additional metal pad structures (422) and via pad (420) structures are used below the bonding pad. The additional metal pad structures and via pad structures comprise alternating segments of interconnect metal (M3) and dielectric fillers (D), and alternating segments of via metal (M2) and dielectric fillers (D), respectively.</p> |
