| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent oxidation of a metal layer by modifying a barrier layer to refractories. CONSTITUTION: A metal layer(12) is formed on a substrate(11). A barrier layer(13) is formed thereon. The first interlayer dielectric(14), the first buffer layer(15), the second interlayer dielectric(16), and the second buffer layer(17) are formed on the barrier layer(13). The first photoresist pattern is formed on a whole surface of the above structure. A via(51) is formed by performing a via-etching process. The first photoresist pattern is removed. The barrier layer(13) is changed to refractories(13a). The second photoresist pattern is formed by depositing and patterning the photoresist. A trench(101) is formed by etching the second buffer layer(17) and the second interlayer dielectric(16). The second photoresist pattern is removed by a strip process.
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