PLASMA RIE POLYMER REMOVAL

摘要

A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising:supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.