SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device comprising an n-channel conductivity type field-effect transistor having a channel forming region in a first region in one major surface of a semiconductor substrate, and a p-channel conductivity type field-effect transistor having a channel forming region in a second region different from the first region in the one major surface of the semiconductor substrate, wherein the inner stress generated in the channel forming region of the n-channel conductivity type field-effect transistor is different from the inner stress generated in the channel forming region of the p-channel conductivity type field-effect transistor. The inner stress generated in the channel forming region of the n-channel conductivity type field-effect transistor is a tensile stress and the inner stress generated in the channel forming region of the p-channel conductivity type field-effect transistor is a compressive stress.