发明名称 BIPOLAR TRANSISTOR WITH LATTICE MATCHED BASE LAYER
摘要 <p>A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.</p>
申请公布号 WO2002043155(A2) 申请公布日期 2002.05.30
申请号 US2001044471 申请日期 2001.11.27
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