ULTRA QUICK-TRIP FUSE FOR PROTECTING POWER SEMICONDUCTORS

摘要

The invention relates to an ultra quick-trip fuse for protecting the power semiconductors, built as a replacement element which comprises one or more fuses (F), each fuse (F) having a fusible element (Et) which causes the local fusion of the fuse (F) by the control transmitted by an element (E) surveying the reverse current through the protected device (D), if a pre-established value of the reverse current intensity is exceeded. The fusible element (Et) can be supplied from the secondary of an adapter transformer (Ta), whose primary may be a voltage primary supplied from the mains or a current primary serially connected in the alternating current path of the installation which includes the protection device.