METHOD FOR ETCHING SEMICONDUCTOR DEVICES USING NEUTRAL-BEAM AND ETCHER USING THE SAME

摘要

PURPOSE: An etching method of semiconductor devices is provided to easily perform an etch processing on a semiconductor device without a physical or an electrical damage by using neutral-beam gotten from a simple method. CONSTITUTION: An ion beam having a constant polarity is firstly extracted and accelerated from an ion source(10). The ion beam is secondly transformed to a neutral-beam by reflecting the accelerated ion beam to a reflection part(18) made of a semiconductor substrate, a silicon dioxide, or a metal substrate. At this time, the transformation of the ion beam to the neutral-beam is carried out by controlling an incidence angle of the ion beam. After locating a substrate(20) on the progressing route of the neutral-beam, a specific material layer of the substrate(20) is lastly etched by the neutral-beam.