发明名称 Semiconductor device, a method of manufacturing the same and storage media
摘要 Outside-cell wiring that extends the upper part of a macro cell to the direction of X axis is composed of the wiring layer of the upper layer than a terminal for a signal of the macro cell and this terminal is formed to extend in the direction of Y axis (direction that intersects the direction of X axis) so that the outside-cell wiring can be secured for a plurality of wiring channels. The macro cell and the outside-cell wiring are connected via this signal terminal.
申请公布号 US2002064064(A1) 申请公布日期 2002.05.30
申请号 US20010982839 申请日期 2001.10.22
申请人 HITACHI, LTD. 发明人 YAMADA TOSHIO;YANAGISAWA KAZUMASA;SHINOZAKI YOSHIHIRO;AOYAGI HIDETOMO
分类号 H01L21/3205;G11C5/02;G11C5/06;H01L21/82;H01L21/822;H01L23/52;H01L27/04;(IPC1-7):G11C5/06 主分类号 H01L21/3205
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