SLURRY FOR CHEMICAL-MECHANICAL POLISHING

摘要

PURPOSE: To inhibit dishing and erosion generated in the chemical-mechanical polishing(CMP) of a copper-based metal film, when an embedded wiring of the copper-based metal film is formed on a barrier metal film of a tantalum- based metal. CONSTITUTION: This slurry for polishing is used for carrying out chemical- mechanical polishing(CMP). In this case, the slurry for polishing contains at least a polishing abrasive, an oxidizer, and a basic amino acid.