发明名称 |
Method for preparing semiconductor including formation of contact hole using difluoromethane gas |
摘要 |
A method for forming a contact hole in a semiconductor device includes the steps of forming a polymer layer on an upper portion and a side wall of photo resist mask, while etching an oxide layer under the photoresist mask to form a contact hole that uses an etchant gas comprising CH2F2 gas; and etching the oxide layer while stopping the supply of CH2F2 gas to the etching process.
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申请公布号 |
US2002064945(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20010995747 |
申请日期 |
2001.11.29 |
申请人 |
CHOI SUNG-GIL;AHN TAE-HYUK |
发明人 |
CHOI SUNG-GIL;AHN TAE-HYUK |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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