| 摘要 |
A semiconductor device with a fuse box includes at least two gate electrodes 8, 9 and a fuse member 6. The two gate electrodes 8, 9 are formed on at least one insulating film 13 on a semiconductor substrate 100. The fuse member 6 is formed on the insulating film 13 on the semiconductor substrate 100. The two gate electrodes 8, 9 are electrically connected each other by the fuse member 6. In addition, the insulating film 13 and a field region 2 constituted by a semiconductor region are arranged adjacent to each other in a frame-like guard ring 1. The guard ring 1 is constituted by a semiconductor region formed on the semiconductor substrate 100.
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