METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

摘要

A method for manufacturing a semiconductor wafer wherein a semiconductor wafer having a sufficient lattice strain to enhance electron mobility and having an Si layer of less crystal defect despite of a relatively simple laminate structure is manufactured by a simple process. This manufacturing method comprises the step of epitaxially growing an SiGe layer on the surface of a first silicon single crystal wafer, the step of coupling the surface of the SiGe layer with the surface of a second wafer with an oxide film in between, and the step of thinning off the silicon single crystal wafer coupled with the second wafer to expose the Si layer with involved lattice strain.