| 摘要 |
PURPOSE: A method for fabricating a gate of a semiconductor device is provided to form a dual metal gate by depositing a metal layer on an NMOS region and a PMOS region. CONSTITUTION: An isolation layer(11), an NMOS region(12a), and a PMOS region(12b) are formed on a semiconductor substrate(10). A gate insulating layer(13) is deposited on the semiconductor substrate(10). The first metal layer(14) is deposited on the gate insulating layer(13). The first metal layer(14) is formed by one of TiNx, WNx, TaNx, MoNx, and TiAlNx. The first metal layer(14) is deposited by using one of a sputtering deposition method, a single atom deposition method, and a remote plasma chemical vapor deposition method. A photoresist layer pattern is formed on the first metal layer(14). The second metal layer(16) and a hard mask layer(17) are deposited on the first metal layer(14) and the nitrated the first metal layer(14a). A dual gate is formed by performing a patterning process.
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