发明名称 Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
摘要 Electroless deposition of Cu provides for repair of copper seed layers formed by vacuum deposition processes, for formation of copper seed layers on catalytic materials, and for bulk fill of damascene trenches and via openings. Electroless plating baths for such depositions are formulated for both room temperature and elevated temperature operation, and each include a copper source, an environmentally friendly reducing agent, a pH buffer, a complexing agent, and a surfactant.
申请公布号 US2002064592(A1) 申请公布日期 2002.05.30
申请号 US20000728683 申请日期 2000.11.29
申请人 DATTA MADHAV;DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL J. 发明人 DATTA MADHAV;DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL J.
分类号 C23C18/30;C23C18/40;H01L21/768;(IPC1-7):B05D5/12;B05D1/36;B05D1/18;B05D3/10 主分类号 C23C18/30
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