发明名称 AN OSCILLATOR HAVING A TRANSISTOR FORMED OF A WIDE BANDGAP SEMICONDUCTOR MATERIAL
摘要 <p>An oscillator and upconverters and downconverters including the oscillator are provided, wherein the oscillator includes a transistor comprised of a semiconductor material having a wide bandgap for producing RF output signals. For example, the transistor can be formed of a semiconductor material, such as GaN, AlGaN, SiC or BN, that has a bandgap of at least 2.0 eV. The oscillator also includes a bias supply for providing a supply voltage and a supply current. Additionally, the oscillator has a tank circuit that includes first and second reactances connected to respective terminals of the transistor such that the transistor is unstable and an oscillating RF output signal is produced. The tank circuit can also include a varactor connected to a respective reactance and a control input is provided to tune the oscillating RF output signal. Upconverters, both saturated and linear, and downconverters are also provided that include the oscillator.</p>
申请公布号 WO2002043238(A1) 申请公布日期 2002.05.30
申请号 US2001044621 申请日期 2001.11.27
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