发明名称 SLURRY FOR CHEMICAL-MECHANICAL POLISHING
摘要 PURPOSE: To provide slurry for chemical-mechanical polishing, that inhibits generation of dishing, and at the same time, achieves polishing at a high polishing speed in chemical-mechanical polishing in a metal film formed on an insulating film having a recess on a substrate. CONSTITUTION: A thickening agent, set to at least 0.001 and less than 0.05 percentage by mass with respect to the entire slurry. In this case, the thickening agent does not have an ionic group, having a sign opposite to that of a charge on the surface of a polishing material particle. Viscosity in the slurry is adjusted to at least 1 mPa.s and less than 5 mPa.s.
申请公布号 KR20020040636(A) 申请公布日期 2002.05.30
申请号 KR20010073318 申请日期 2001.11.23
申请人 NEC CORPORATION;TOKYO MAGNETIC PRINTING CO., LTD. 发明人 AOYAGI KENICHI;ITAKURA TETSUYUKI;SAKURAI SHIN;TSUCHIYA YASUAKI;WAKE TOMOKO
分类号 B24B37/00;C09G1/02;C09K3/14;C09K13/00;H01L21/304;H01L21/306;(IPC1-7):C09K13/00 主分类号 B24B37/00
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