| 摘要 |
A trench is formed on a primary surface of a semiconductor substrate, and is filled with trench material to separate the surface region of the semiconductor substrate into plural active regions. At least a portion of the surface of the trench material adjoining the semiconductor substrate is depressed by a predetermined depth with reference to the primary surface of the semiconductor device. Thus, prevented is a decrease in a drain current of a semiconductor device having a trench isolation structure.
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