发明名称 |
Optoelectronic microelectronic fabrication with infrared filter and method for fabrication thereof |
摘要 |
Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.
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申请公布号 |
US2002063214(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20000725973 |
申请日期 |
2000.11.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. |
发明人 |
HSIAO YU-KUNG;CHANG CHIH-KUNG;WENG FU-TIEN;HSIUNG CHUNG-SHENG;CHANG BII-JUNG;LU KUO-LIANG |
分类号 |
G01J5/08;(IPC1-7):G01J5/20 |
主分类号 |
G01J5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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