| 发明名称 |
ETCHING OF HIGH ASPECT RATIO FEATURES IN A SUBSTRATE |
| 摘要 |
A substrate processing chamber (110) comprisea a gas supply (56) to provide a gas to the chamber, first and second electrodes (115, 105) that may be electrically biased to energize the gas, the second electrode (115) being adapted to be chargeable to a power density of at least about 10 watts/cm<2>, and the second electrode (115) comprising a receiving surface (147) to receive a substrate (10), and an exhaust (110) to exhaust the gas. |
| 申请公布号 |
WO0243116(A2) |
申请公布日期 |
2002.05.30 |
| 申请号 |
WO2001US46210 |
申请日期 |
2001.11.01 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KUMAR, AJAY;KHAN, ANISUL;OUYE, ALAN;WADENSWEILER, RALPH;KUMAR, ANANDA;CHAFIN, MICHAEL, G.;KHOLODENKO, ARNOLD;PODLESNIK, DRAGAN, V. |
| 分类号 |
H01L21/3065;H01J37/32;H01L;H01L21/311 |
主分类号 |
H01L21/3065 |
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