| 摘要 |
A method of making a semiconductor device comprises forming a gate electrode on a semiconductor substrate, forming a diffusion layer in the semiconductor substrate, forming a first SiO2 film on a bottom surface of the semiconductor substrate and second SiO2 film on an upper surface of the semiconductor substrate, removing the second SiO2 film, forming a CoSi2 film on the diffusion, and removing an undesired cobalt from the first SiO2 film.
|
