METHOD OF MANUFACTURING AN INTERCONNECT STRUCTURE HAVING A PASSIVATION LAYER FOR PREVENTING SUBSEQUENT PROCESSING REACTIONS

摘要

The present invention provides a method of manufacturing an interconnect structure within a substrate. The method includes forming an opening in a substrate, which may be a dielectric layer having a low k; for example, one where the dielectric constant ranges from about 3.9 to about 1.9. This method further includes forming a passivation layer within the opening and a photoresist within the opening and over the passivation layer. The passivation layer substantially or completely inhibits the diffusion of elements from the substrate that can deactivate a photo acid generator (PAG) within the photoresist, which prevents the photoresist from developing properly.