SLURRY FOR CHEMICAL AND MECHANICAL POLISHING

摘要

PURPOSE: To control dishing and erosion occurring on the chemical and mechanical polishing(CMP) of a copper-based metal film, when a copper-based metal- embedded wiring is formed on a barrier metal film comprising a tantalum-based metal. CONSTITUTION: CMP is carried out using a polishing slurry containing at least polishing abrasive grains, an oxidizing agent and a higher primary monoamine.