| 发明名称 |
Semiconductor device and a method of manufacturing the same |
| 摘要 |
Semiconductor regions for the suppression of short channel effects are not provided for a pMIS and an nMIS that constitute an inverter circuit of an input first stage of an I/O buffer circuit, whereas semiconductor regions for the suppression of short channel effects are provided for pMIS and nMIS of inverter circuits subsequent to the next stage of an I/O buffer circuit.
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| 申请公布号 |
US2002063284(A1) |
申请公布日期 |
2002.05.30 |
| 申请号 |
US20010985303 |
申请日期 |
2001.11.02 |
| 申请人 |
AONO HIDEKI;OKUYAMA KOUSUKE;WATANABE KOZO;KURODA KENICHI |
发明人 |
AONO HIDEKI;OKUYAMA KOUSUKE;WATANABE KOZO;KURODA KENICHI |
| 分类号 |
H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L27/105;H03K19/00;(IPC1-7):H01L21/00;H01L21/336;H01L21/84;H01L29/76 |
主分类号 |
H01L21/8234 |
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