MOS TRANSISTOR INTEGRATION

摘要

A method of fabricating a semiconductor device in which the bitlines and the bitline contacts are fabricated utilizing a single masking step in which line-space resist patterns are employed in defining the regions for the bitlines and the bitline contacts. The method utilizes a first line-space resist pattern and a second line-space resist pattern which is perpendicularly aligned to the first line-space resist pattern to form bitlines that are self-aligned to the bitline contacts.